STT3490N n-channel enhancement mode mos.fet 1.2 a, 150 v, r ds(on) 700 m ? elektronische bauelemente 25-aug-2010 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen and lead-free key features ? low r ds(on) trench technology. ? low thermal impedance. ? fast switching speed. typical applications ? white led boost converters. ? automotive systems ? industrial dc/dc conversion circuits product summary product summary v ds (v) r ds (on) (m ? ? i d (a) 150 700@v gs = 10v 1.2 1200@v gs = 4.5v 1 absolute maximum ratings(t a =25 c unless otherwise noted) parameter symbol ratings unit maximum drain-source voltage v ds 150 v gate-source voltage v gs 20 v continuous drain current a t a = 25 c i d 1.2 a t a = 70 c 1 pulsed drain current b i dm 10 a continuous source current (diode conduction) a i s 2.5 a power dissipation a t a = 25 c p d 2 w t a = 70 c 1.3 operating junction and st orage temperature range tj, tstg -55 ~ 150 c thermal resistance ratings parameter symbol maximum unit maximum junction to ambient a t Q 10 sec r ? ja 62.5 c / w steady state 110 notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature. ref. millimete r ref. millimete r min. max. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e 1 23 4 5 6 d g d d d s
STT3490N n-channel enhancement mode mos.fet 1.2 a, 150 v, r ds(on) 700 m ? elektronische bauelemente 25-aug-2010 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions gate-threshold voltage v gs(th) 1 - 3.5 v v ds =v gs , i d = 250ua gate-body leakage i gss - - 100 ua v ds = 0v, v gs = 20v zero gate voltage drain current i dss - - 1 ua v ds = 120v, v gs = 0v - - 10 v ds = 120v, v gs = 0v, t j = 55 c on-state drain current a i d(on) 10 - - a v ds = 5v, v gs = 10v drain-source on-resistance a r ds(on) - - 700 m ? v gs = 10v, i d = 1.2a - - 1200 v gs = 4.5v, i d = 1a forward transconductance a g fs - 11 - s v ds = 15v, i d = 1.2a diode forward voltage a v sd - 0.8 - v i s = 1.25a, v gs = 0v dynamic b total gate charge q g - 2.5 - nc v ds = 10v, v gs = 4.5v, i d = 1a gate-source charge q gs - 1 - gate-drain charge q gd - 0.8 - turn-on delay time t d(on) - 5 - ns v dd = 10v, v gen = 10v, r l = 10 ? , i d = 1a, r gen = 6 ? rise time t r - 5 - turn-off delay time t d(off) - 6 - fall time t f - 4 - input capacitance c iss - 320 - pf v ds = 15v, v gs = 0v, f= 1mhz output capacitance c oss - 37 - reverse transfer capacitance c rss - 20 - notes a. pulse test pw Q 300 us duty cycle Q 2%. b. guaranteed by design, not su bject to production testing.
STT3490N n-channel enhancement mode mos.fet 1.2 a, 150 v, r ds(on) 700 m ? elektronische bauelemente 25-aug-2010 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
STT3490N n-channel enhancement mode mos.fet 1.2 a, 150 v, r ds(on) 700 m ? elektronische bauelemente 25-aug-2010 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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